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November 25, 2024 -Monday

 
  ​TOSHIBA'S NEWLY LAUNCHED 1200V AND 1700V SILICON CARBIDE MOSFET MODULES WILL CONTRIBUTE TO SMALLER, MORE EFFICIENT INDUSTRIAL EQUIPMENT

Wednesday 26/01/2022



Toshiba: 1200V and 1700V silicon carbide (SiC) MOSFET modules that contribute to smaller, more efficient industrial equipment. (Graphic: Business Wire)
Toshiba: 1200V and 1700V silicon carbide (SiC) MOSFET modules that contribute to smaller, more efficient industrial equipment. (Graphic: Business Wire)


KAWASAKI, Japan, Jan 26 (Bernama-BUSINESS WIRE) -- Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V and drain current rating of 600A; and “MG400V2YMS3,” with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings, they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.

This press release features multimedia. View the full release here: 
https://www.businesswire.com/news/home/20220125005489/en/
 
The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.

Applications
  • Inverters and converters for railway vehicles
  • Renewable energy power generation systems
  • Motor control equipment
  • High frequency DC-DC converter
Features
  • Mounting compatible with Si IGBT modules
  • Lower loss than Si IGBT modules
MG600Q2YMS3
VDS(on)sense =0.9V (typ.) @ID=600A, Tch=25°C
Eon=25mJ (typ.), Eoff=28mJ (typ.) @VDS=600V, ID=600A, Tch=150°C

MG400V2YMS3
VDS(on)sense=0.8V (typ.) @ID=400A, Tch=25°C
Eon=28mJ (typ.), Eoff=27mJ (typ.) @VDS=900V, ID=400A, Tch=150°C
  • Built-in NTC Thermistor

Table
 
Follow the links below for more on the new products.
MG600Q2YMS3
MG400V2YMS3

Follow the link for more on Toshiba’s SiC Power Devices.
SiC Power Devices

* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
The company's 22,000 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales now surpassing 710-billion yen (US$6.5 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.
Find out more at https://toshiba.semicon-storage.com/ap-en/top.html


View source version on businesswire.com: https://www.businesswire.com/news/home/20220125005489/en/

Contact

Customer Inquiries
Power Device Sales & Marketing Dept.
Tel: +81-44-548-2216
Contact us

Media Inquiries:
Chiaki Nagasawa
Digital Marketing Department
Toshiba Electronic Devices & Storage Corporation
Tel: +81-44-549-8361
semicon-NR-mailbox@ml.toshiba.co.jp

Source : Toshiba Electronic Devices & Storage Corporation

--BERNAMA

 
 
 

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