UFS Ver. 4.0 devices from Kioxia integrate the company’s innovative BiCS FLASH™ 3D flash memory and a controller in a JEDEC-standard package. UFS 4.0 incorporates MIPI M-PHY 5.0 and UniPro 2.0 and supports theoretical interface speeds of up to 23.2Gbps per lane or 46.4Gbps per device. UFS 4.0 is backward compatible with UFS 3.1.
Key Features include:
· Performance improvement over previous generation
[3]: +18% sequential write, +30% random write and +13% random read
· Supports High Speed Link Startup Sequence (HS-LSS) features: With conventional UFS, Link Startup (M-PHY and UniPro initialization sequence) between device and host is performed at low-speed PWM-G1 (3~9Mbps
[4]), but with HS-LSS, it can be performed at a faster HS-G1 Rate A (1248Mbps). This is expected to reduce the time for Link Startup by approximately 70% compared to the conventional method.
· Enhances security: By utilizing Advanced RPMB (Replay Protected Memory Block) for faster read and write access to security data, such as user credentials on RPMB area, and RPMB Purge to ensure discarded data may be sanitized securely and rapidly.
· Supports Extended Initiator ID (Ext-IID): Intended to be used with Multi Circular Queue (MCQ) at the UFS 4.0 host controller for improved random performance.
Related Link:
Kioxia’s UFS Ver. 4.0 Embedded Flash Memory Devices Product Information
https://www.kioxia.com/en-jp/business/memory/mlc-nand/ufs4.htmlNotes
[1] Universal Flash Storage (UFS) is a product category for a class of embedded memory products built to the JEDEC UFS standard specification. Due to its serial interface, UFS supports full duplexing, which enables both concurrent reading and writing between the host processor and UFS device.
[2] The company’s newest devices are supported in three capacities: 256 gigabytes (GB), 512GB and 1 terabyte
(TB). Sample shipments of the 256GB and 512GB device began this month, with the 1TB device scheduled to follow after October. Specification of the samples may differ from commercial products
[3] Comparing Kioxia’s new 512GB UFS Ver. 4.0 embedded flash memory device and Kioxia’s previous generation 512GB UFS Ver. 4.0 embedded flash memory device (part number THGJFJT2T85BAT0).
[4] PWM-G1 communication speed depends on the host and the device.
*In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits.
*Read and write speeds are the best values obtained in a specific test environment at Kioxia Corporation and Kioxia Corporation warrant neither read nor write speeds in individual devices. Read and write speed may vary depending on a device used and file size read or written.
*Company names, product names and service names may be trademarks of third party companies.
About Kioxia
Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory” by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, SSDs, automotive and data centers.
*Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.
