Thursday 25/09/2025

^{Toshiba: TPH2R70AR5, a 100V N-channel power MOSFET with the latest generation process technology}


KAWASAKI, Japan, Sept 25 (Bernama-BUSINESS WIRE) -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH2R70AR5,” a 100V N-channel power MOSFET fabricated with U-MOS11-H, Toshiba’s latest-generation process^[1]. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in data centers and communications base stations. Shipments start today.

This press release features multimedia. View the full release here: 
https://www.businesswire.com/news/home/20250924029500/en/

The 100V U-MOS11-H series improves on the drain-source On-resistance (R_DS(ON)), total gate charge (Q_g) and the trade-off between them (R_DS(ON) × Q_g) delivered by Toshiba’s existing generation process, the U-MOSX-H series, reducing both conduction and switching power losses.

TPH2R70AR5 offers approximately 8% lower R_DS(ON) and 37% lower Q_g against TPH3R10AQM, a U-MOSX-H series product, plus a 42% improvement in R_DS(ON) × Q_g. It also achieves high-speed body diode performance through the application of lifetime control technology^[2], which reduces reverse recovery charge (Q_rr) and suppresses spike voltage. Q_rr is improved by approximately 38% and the R_DS(ON) × Q_rr is also improved by approximately 43%. These industry-leading^[3] trade-off characteristics^[4], both R_DS(ON) × Q_g and R_DS(ON) × Q_rr, minimize power loss, contributing to higher efficiency and power density in power supply systems. It also adopts the SOP Advance (N) package and offers excellent mounting compatibility with industry standards.

Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time; and highly accurate G2 SPICE model that accurately reproduces transient characteristics. All are now available.

Toshiba will continue to expand its lineup of low-loss MOSFETs that enable more efficient power supplies and contribute to lower equipment power consumption.

Notes:
[1] As of September 2025, among Toshiba’s process technologies for low-voltage power MOSFETs. Toshiba survey.
[2] Lifetime control technology: Intentionally shortening the carrier lifetime by using an ion beam to introduce defects into the semiconductor enhances switching speed, which improves the recovery speed of the diode and reduces noise.
[3]　As of September 2025, comparison with other 100V N-channel power MOSFETs for industrial equipment. Toshiba survey.
[4] R_DS(ON)×Q_g: 120mΩ・nC (typ), R_DS(ON)・Q_rr: 127mΩ×nC (typ)

Applications

• Power supplies for industrial equipment used in data centers and communications base stations
• Switched-mode power supplies (high efficiency DC-DC converters, etc.)

Features

• Low drain-source On-resistance: R_DS(ON)＝2.7mΩ (max) (V_GS=10V, I_D=50A, T_a＝25°C)
• Low total gate charge: Q_g=52nC (typ.) (V_DD=50V, V_GS=10V, I_D=50A, T_a＝25°C)
• Low reverse recovery charge: Q_rr=55nC (typ.) (I_DR＝50A, V_GS=0V, -dI_DR/dt=100A/μs, T_a＝25°C)

Main Specifications

(Unless otherwise specified, Ta=25°C)
Part number				TPH2R70AR5
Absolute maximum ratings	Drain-source voltage VDSS (V)			100
	Drain current (DC) ID (A)		Tc=25°C	190
	Channel temperature Tch (°C)			175
Electrical characteristics	Drain-source On- resistance RDS(ON) (mΩ)	VGS=10V, ID=50A	Max	2.7
		VGS=8V, ID＝50A	Max	3.6
	Total gate charge Qg (nC)	VDD=50V, VGS=10V, ID=50A	Typ.	52
	Gate switch charge Qsw (nC)		Typ.	17
	Output charge Qoss (nC)	VDD=50V, VGS=0V, f=1MHz	Typ.	106
	Input capacitance Ciss (pF)	VDS=50V, VGS=0V, f=1MHz	Typ.	4105
	Reverse recovery charge Qrr (nC)	IDR＝50A, VGS=0V, -dIDR/dt=100A/μs	Typ.	55
Package	Name			SOP Advance(N)
	Size (mm)		Typ.	5.15×6.1
Sample Check & Availability				Buy Online

Follow the link below for more on the new product.
TPH2R70AR5

Follow the link below for more on Toshiba’s MOSFETs.
MOSFETs

Follow the link below for more on the highly accurate SPICE models (G2 model).
G2 model

To check availability of the new products at online distributors, visit:
TPH2R70AR5
Buy Online

* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

Its 19,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.

Find out more at https://toshiba.semicon-storage.com/ap-en/top.html

View source version on businesswire.com: 
https://www.businesswire.com/news/home/20250924029500/en/

Contact

Customer Inquiries:
Power & Small Signal Device Sales & Marketing Dept.
Tel: +81-44-548-2216
Contact Us

Media Inquiries:
C. Nagasawa
Communications & Market Intelligence Dept.
Toshiba Electronic Devices & Storage Corporation
semicon-NR-mailbox@ml.toshiba.co.jp

Source: Toshiba Electronic Devices & Storage Corporation

--BERNAMA